DPS 2008

International Organizing Committee	International Advisory Committee
Executive Committee	Publication Committee
Program Committee

International Organizing Committee

	Name	Affiliation	Country
Chair	Masahiro Yoneda	Renesas Technology Corp.	Japan
Members:	D. S. H. Chan	National University of Singapore	Singapore
	C. K. Choi	Chejyu National University	Korea
	V. Donnelly	University of Houston	USA
	S. Fujimura	Tokyo Institute of Technology	Japan
	N. Fujiwara	Renesas Technology Corp	Japan
	D. B. Graves	University of California at Berkeley	USA
	J. G. Han	Shungkyunkwan University	Korea
	M. Hori	Nagoya University	Japan
	L. van den Hove	Silicon Process Technology IMEC	Belgium
	M. Izawa	Hitachi Ltd.	Japan
	O. Joubert	LTM/CNRS	France
	K. Kudo	Chiba University	Japan
	M. J. Kushner	Iowa State University	USA
	K. C. Leou	National Tsing Hua University	Taiwan
	T. Makabe	Keio University	Japan
	K. Nojiri	Lam Research Co., Ltd.	Japan
	T. Ohiwa	Toshiba Corp.	Japan
	K. Ono	Kyoto University	Japan
	L. Overzet	University of Texas at Dallas	USA
	M. C. M. van de Sanden	Eindvoven University of Technology	the Netherland
	H. H. Sawin	Massachusetts Institute of Technology	USA
	J. P. M. Schmitt	Unaxis-France SA	France
	K. Tachibana	Kyoto University	Japan
	O. Takai	Nagoya University	Japan
	M. Tsujimura	Ebara Corp.	Japan
	S. Xu	Nanyang Technological University	Singapore
	N. Yamamoto	Tokyo Electron AT Ltd.	Japan
	S. Zaima	Nagoya University	Japan

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International Advisory Committee

	Name	Affiliation	Country
Chair	J. Nishizawa	Tokyo Metropolitan University	Japan
Co-chair	Y. Tarui	Tokyo Univ. of Agriculture and Technology	Japan
	M. Esashi	Tohoku University	Japan
	R. Gottscho	Lam Research Co., Ltd.	USA
	Y. Horiike	National Institute for Material Science	Japan
	S. Hosaka	Tokyo Electron Ltd.	Japan
	A. Ishitani	IMEC	Japan
	T. Lill	Applied Materials Inc.	USA
	Y. Ohki	Waseda University	Japan
	H. Sugai	Chubu University	Japan
	S. Tachi	Hitachi Hi-Technologies Co.	Japan

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Executive Committee

	Name	Affiliation	Country
Chair	M. Sekine	Nagoya University	Japan
Vice-chair	S. Samukawa	Tohoku University	Japan
Vice-chair	K. Kurihara	Toshiba Corporation	Japan
	T. Ishijima	Nagoya University	Japan
	N. Itabashi	Hitachi Ltd.	Japan
	K. Kinoshita	NEC Corporation	Japan
	N. E. Lee	Sungkyunkwan University	Korea
	Y. Morikawa	ULVAC Incorporated	Japan
	H. Nakagawa	Matsushita Electric Industrial Co., Ltd.	Japan
	K. Sasaki	Nagoya University	Japan
	M. Shiratani	Kyushu University	Japan
	E. Stamate	Riso National Laboratory	Denmark
	T. Tatsumi	Sony corporation	Japan
	H. Toyoda	Nagoya University	Japan
	P. Ventzek		USA
	K. Yonekura	Renesas Technology Corporation	Japan

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Publication Committee

	Name	Affiliation	Country
Chair	M. Shiratani	Kyushu University	Japan
Vice-chair	K. Sasaki	Nagoya University	Japan
Vice-chair	E. Stamate	Riso National Laboratory	Denmark
Member	T. Abe	Tohoku University	Japan
	J. H. Boo	Sungkyunkwan University	Korea
	L. Boufendi	Orleans University	France
	T. Ishijima	Nagoya University	Japan
	O. Hotta	Kyoto Institute of Technology	Japan
	K. Kinoshita	NEC Corp	Japan
	G. Y. Yeom	Sungkyunkwan University	Korea

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Program Committee

	Name	Affiliation	Country
Chair	K. Kinoshita	NEC Corp.	Japan
Vice-chair	M. Izawa	Hitachi Ltd.	Japan
Vice-chair	T. Tatsumi	Sony corporation	Japan
Member	T-H. Ahn	Samsung Electronics Co.	Korea
	T. Arai	Hitachi Ltd.	Japan
	Y. Awano	FUJITSU LIMITED	Japan
	K. Azuma	Advanced LCD Technologies Development Center	Japan
	J-P. Booth	Lam Research Corp.	France
	J. P. Chang	University of California at Los Angeles	USA
	D. J. Economou	University of Houston	USA
	M. Engelhardt	Qimonda	Germany
	K. Eriguchi	Kyoto University	Japan
	P. Favia	University of Bari	Itary
	S. Hamaguchi	Osaka University	Japan
	H. Hayashi	Toshiba Corp. Semiconductor Company	Japan
	T. Hayashi	Nagoya University	Japan
	M. Hiramatsu	Meijyo University	Japan
	O. Hotta	Kyoto Institute of Technology	Japan
	Y. Ichikawa	Fuji Electric Device Technology Co., Ltd.	Japan
	T. Ichiki	The University of Tokyo	Japan
	S. Ikeda	ASM Japan K.K.	Japan
	N. Ikegami	Oki Electric Industry Co., Ltd.	Japan
	K.Karahashi	Osaka University	Japan
	C. J. Kang	Samsung Electronics Co.	Korea
	H. Kokura	FUJITSU LIMITED	Japan
	M. Kondo	Applied Materials Japan, Inc.	Japan
	A. Kono	Nagoya University	Japan
	A. Koshiisi	Lam Research Corp.	USA
	M. Honda	Tokyo Electron AT Ltd.	Japan
	H. Kuwano	Tohoku University	Japan
	B. J. Lee	Korea Basic Science Institute	Korea
	S. K. Lee	Hynix	Korea
	A. P. Mahorowala	IBM	USA
	S. Miyazaki	Hiroshima University	Japan
	Y. Nakagawa	Canon Anerva Corp.	Japan
	K. Nakamura	Chubu University	Japan
	M. Nakamura	International SEMATECH	Japan
	N. Negishi	Hitachi Ltd.	Japan
	K. Nojiri	Lam Research Co., Ltd.	Japan
	T. Ohiwa	Toshiba Corp.	Japan
	Y. Ohshita	Toyota Technological Institute	Japan
	H. Ohtake	Tohoku University	Japan
	M. Sato	Sharp Corp	Japan
	I. Sawada	Tokyo Electron Ltd.	Japan
	Y. Setsuhara	Osaka University	Japan
	K. Shimogaki	The University of Tokyo	Japan
	T. Shirafuji	Kyoto University	Japan
	J. W. Shon	Jusung Engineering	Korea
	K. Takahashi	Kyoto Institute of Technology	Japan
	S. Watanabe	Hitachi High-Technologies Corp.	Japan
	K. Yonekura	Renesas Technology Corp.	Japan
	W. J. Yoo	National University of Singapore	Singapore

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